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DCR1002SF
DCR1002SF
Phase Control Thyristor Advance Information
Replaces April 2000 version, DS4243-4.3 DS4243-5.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability s Low Turn-on Losses
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1400V 1850A 32500A 1000V/s 1000A/s
APPLICATIONS
s High Power Converters s High Voltage Power Supplies s DC Motor Control
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 1400 1300 1200 1100 1000 Conditions
DCR1002SF14 DCR1002SF13 DCR1002SF12 DCR1002SF11 DCR1002SF10
Tvj = 0 to 125C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: F See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1002SF12 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR1002SF
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1850 2900 2668 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1190 1870 1550 A A A
CURRENT RATINGS
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1430 2245 1780 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 900 1414 1065 A A A
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DCR1002SF
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 26 3.38 x 106 32.5 5.28 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 125 125 22.0
o
Min. dc Anode dc -
Max. 0.018 0.036 0.036 0.003 0.006 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR1002SF
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 80% VDRM to 1000A Gate source 20V, 10 tr = 0.5s to JEDEC RS397 At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. Max. 100 1000 500 1000 0.9 0.17 2 Units mA V/s A/s A/s V m s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd
Threshold voltage On-state slope resistance Delay time
tq
Turn-off time
IT = 800A, tp = 1ms, Tj = 125C, VRM = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear
Tj = 25oC, VD = 5V Tj = 25oC, Rg-k =
-
200
s
IL IH
Latching current Holding current
-
350 100
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At 67% VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.5 200 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
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DCR1002SF
CURVES
6000 Measured under pulse conditions. Conditions: Tj = 125C
500
5000
Instantaneous on-state current, IT - (A)
400
4000
Mean power dissipation - (W)
300
3000
200
2000
dc
1000
100 1/2 wave 3 phase 6 phase
0 0.5
0.75 1.00 1.25 1.50 1.75 Instantaneous on-state voltage, VT - (V)
2.00
0 0 500 1000 Mean on-state current - (A) 1500
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = -0.6475 B = 0.3079 C = 0.0002787 D = -0.02311 these values are valid for Tj = 125C for IT 500A to to 6000A
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DCR1002SF
10000 Conditions: IT = 1000A, VR = -100V, Tj = 125C QS is total integral stored charge
10000 Conditions: IT = 1000A, VR = -100V, Tj = 125C Max IRR
Max QS
Reverse recovery current, IRR - (A)
Total stored charge, QS - (C)
Min IRR
1000
Min QS
1000
IT QS
dI/dt
100 0.1
IRR
1.0
10
100
100 0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/s)
Rate of decay of on-state current, dI/dt - (A/s)
Fig.4 Stored charge
100
Fig.5 Reverse recovery current
0.1
Pulse width s 100 200 500 1ms 10ms
Frequency Hz 50 150 150 150 150 20 100 150 150 150 50 400 150 125 100 25 -
Table gives pulse power PGM in Watts
Thermal Impedance - Junction to case (C/W)
0W 10 W 50
Anode side cooled
W 20 W 10 5W
Gate trigger voltage, VGT - (V)
10
Double side cooled
pe Up
1
r lim
i
% t 95
0.01
Tj = 125C
VGD
e Low
r lim
it 5
%
Tj = 25C Tj = -40C
Region of certain triggering
Conduction
Effective thermal resistance Junction to case C/W Double side 0.018 0.021 0.022 0.025 Anode side 0.036 0.038 0.040 0.043
d.c. Halfwave 3 phase 120 6 phase 60
0.1 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1 Time - (s)
1.0
10
Gate trigger current, IGT - (A)
Fig.6 Gate characteristics
Fig.6 Transient thermal impedance - junction to case
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DCR1002SF
70 I2t = I2 x t 2 60
Peak half sine wave on-state current - (kA)
50
40
5
I2t value - (A2s x 106)
30 I2t
4
20
3
10 1 ms 10 1 2 3 45 10 Cycles at 50Hz Duration
2 20 30 50
Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C)
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DCR1002SF
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode O76 max O48 nom
O1.5 Gate
O48 nom
Anode
Nominal weight: 450g Clamping force: 19.5kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F
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DCR1002SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4243-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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